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GaN/AlN multiple quantum well structures grown by MBE on GaN templates for 1.55 μm intersubband absorption

Author(s):
T. Aggerstam ( Royal Institute of Technology, KTH (Sweden) )
T. G. Andersson ( Chalmers Univ. of Technology (Sweden) )
P. Holmstrom ( Royal Institute of Technology, KTH (Sweden) )
P. Janes ( Royal Institute of Technology, KTH (Sweden) )
X. Y. Liu ( Chalmers Univ. of Technology (Sweden) )
S. Lourdudoss ( Royal Institute of Technology, KTH (Sweden) )
L. Thylen ( Royal Institute of Technology, KTH (Sweden) )
2 more
Publication title:
Quantum sensing and nanophotonic devices IV : 22-25 January 2007, San Jose, California, USA
Title of ser.:
Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:
6479
Pub. Year:
2007
Pub. info.:
Bellingham, Wash.: SPIE - The International Society of Optical Engineering
ISSN:
0277786X
ISBN:
9780819465924 [0819465925]
Language:
English
Call no.:
P63600/6479
Type:
Conference Proceedings

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