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Thermal analysis of AlGaN/GaN HFETs using electro-thermal simulation and micro-Raman spectroscopy

Author(s):
T. Fujishima ( Ritsumeikan Univ. (Japan) )
K. Inoue ( R&D Association for Future Electron Devices (Japan) )
K. Kosaka ( Ritsumeikan Univ. (Japan) )
A. Hinoki ( Ritsumeikan Univ. (Japan) )
T. Yamada ( R&D Association for Future Electron Devices (Japan) )
T. Tsuchiya ( R&D Association for Future Electron Devices (Japan) )
J. Kikawa ( R&D Association for Future Electron Devices (Japan) )
S. Kamiya ( R&D Association for Future Electron Devices (Japan) )
A. Suzuki ( Ritsumeikan Univ. (Japan) and R&D Association for Future Electron Devices (Japan) )
T. Araki ( Ritsumeikan Univ. (Japan) )
Y. Nanishi ( Ritsumeikan Univ. (Japan) )
6 more
Publication title:
Gallium nitride materials and devices II : 22-25 January 2007, San Jose, California, USA
Title of ser.:
Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:
6473
Pub. Year:
2007
Pub. info.:
Bellingham, Wash.: SPIE - The International Society of Optical Engineering
ISSN:
0277786X
ISBN:
9780819465863 [0819465860]
Language:
English
Call no.:
P63600/6473
Type:
Conference Proceedings

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