AlGaN-based deep ultraviolet light emitting diodes with reflection layer
- Author(s):
- M. Khizar ( Univ. of North Carolina at Charlotte (USA) )
- Y. M. A. Raja ( Univ. of North Carolina at Charlotte (USA) )
- Publication title:
- Gallium nitride materials and devices II : 22-25 January 2007, San Jose, California, USA
- Title of ser.:
- Proceedings of SPIE - the International Society for Optical Engineering
- Ser. no.:
- 6473
- Pub. Year:
- 2007
- Pub. info.:
- Bellingham, Wash.: SPIE - The International Society of Optical Engineering
- ISSN:
- 0277786X
- ISBN:
- 9780819465863 [0819465860]
- Language:
- English
- Call no.:
- P63600/6473
- Type:
- Conference Proceedings
Similar Items:
Materials Research Society |
7
Conference Proceedings
Deep ultraviolet light-emitting diodes and photodetectors for UV communications (Invited Paper)
SPIE - The International Society of Optical Engineering |
Springer |
Materials Research Society |
SPIE - The International Society of Optical Engineering |
SPIE - The International Society of Optical Engineering |
4
Conference Proceedings
Short-Period AlGaN Based Superlattices for Deep UV Light Emitting Diodes Grown By Gas Source Molecular Beam Epitaxy
Materials Research Society |
10
Conference Proceedings
III-N multiple quantum wells based 285- to 340-nm deep-ultraviolet light-emitting diodes over sapphire (Invited Paper)
SPIE-The International Society for Optical Engineering |
5
Conference Proceedings
Deep UV Light Emitting Diodes Based on Short Period Superlattices of AlN/AlGaN
Electrochemical Society |
11
Conference Proceedings
Quaternary InAIGaN-based multiquantum wells for ultraviolet light-emitting diode application
SPIE-The International Society for Optical Engineering |
SPIE - The International Society of Optical Engineering |
12
Conference Proceedings
Improvement of ultra deep ultraviolet light emitting diodes with asymmetric active region [6134-22]
SPIE - The International Society of Optical Engineering |