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Nitride-based light-emitting diodes with p-AlInGaN surface layers prepared at various temperatures

Author(s):
  • C. W. Kuo ( National Central Univ. (Taiwan) )
  • C. M. Chen ( National Central Univ. (Taiwan) )
  • C. H. Kuo ( National Central Univ. (Taiwan) )
  • G. C. Chi ( National Central Univ. (Taiwan) )
Publication title:
Gallium nitride materials and devices II : 22-25 January 2007, San Jose, California, USA
Title of ser.:
Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:
6473
Pub. Year:
2007
Pub. info.:
Bellingham, Wash.: SPIE - The International Society of Optical Engineering
ISSN:
0277786X
ISBN:
9780819465863 [0819465860]
Language:
English
Call no.:
P63600/6473
Type:
Conference Proceedings

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