AlGaN/GaN MOS transistors using crystalline ZrO2 as gate dielectric

AlGaN/GaN MOS transistors using crystalline ZrO2 as gate dielectric

Author(s):

X. Gu ( Virginia Commonwealth Univ. (USA) )

N. Izyumskaya ( Virginia Commonwealth Univ. (USA) )

V. Avrutin ( Virginia Commonwealth Univ. (USA) )

J. Xie ( Virginia Commonwealth Univ. (USA) )

S. Chevtchenko ( Virginia Commonwealth Univ. (USA) )

B. Xiao ( Virginia Commonwealth Univ. (USA) )

H. Morkoc ( Virginia Commonwealth Univ. (USA) )

2 more

Publication title:

Gallium nitride materials and devices II : 22-25 January 2007, San Jose, California, USA

Title of ser.:

Proceedings of SPIE - the International Society for Optical Engineering

Ser. no.:

6473

Pub. Year:

2007

Pub. info.:

Bellingham, Wash.: SPIE - The International Society of Optical Engineering

ISSN:

0277786X

ISBN:

9780819465863 [0819465860]

Language:

English

Call no.:

P63600/6473

Type:

Conference Proceedings

Details

TDL ID:	ZA00046781
Series ID:	PA00000029
Conf. info. (Name):	Photonics West - Optoelectronic Materials and Devices : Gallium Nitride Materials and Devices
Conf. info. (Number):	2007 : 2nd
Conf. info. (Venue):	San Jose, California, USA
Conf. info. (Date):	2007.01.22-2007.01.25

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