AlGaN/GaN MODFET regrown by rf-MBE on MOCVD templates
- Author(s):
- J. Xie ( Virginia Commonwealth Univ. (USA) )
- H. Morkoc ( Virginia Commonwealth Univ. (USA) )
- L. Zhou ( Arizona State Univ. (USA) )
- D. J. Smith ( Arizona State Univ. (USA) )
- Publication title:
- Gallium nitride materials and devices II : 22-25 January 2007, San Jose, California, USA
- Title of ser.:
- Proceedings of SPIE - the International Society for Optical Engineering
- Ser. no.:
- 6473
- Pub. Year:
- 2007
- Pub. info.:
- Bellingham, Wash.: SPIE - The International Society of Optical Engineering
- ISSN:
- 0277786X
- ISBN:
- 9780819465863 [0819465860]
- Language:
- English
- Call no.:
- P63600/6473
- Type:
- Conference Proceedings
Similar Items:
1
Conference Proceedings
Characterization of GaN epitaxial films grown on SiNx and TiNx porous network templates (Invited Paper) [6121-11]
SPIE - The International Society of Optical Engineering |
7
Conference Proceedings
Conductive atomic force microscopy study of MBE GaN films (Invited Paper) [6121-20]
SPIE - The International Society of Optical Engineering |
Materials Research Society |
Society of Photo-optical Instrumentation Engineers |
3
Conference Proceedings
GaN Layers Re-Grown on Etched GaN Templates by Plasma Assisted Molecular Beam Epitaxy
Materials Research Society |
SPIE - The International Society of Optical Engineering |
4
Conference Proceedings
SURFACE AND INTERFACE DAMAGE CHARACTERIZATION OF REACTIVE ION ETCHED MBE REGROWN GaAs
Materials Research Society |
10
Conference Proceedings
High reflectivity ultraviolet distributed Bragg reflector based on AlGaN/AlGaN multilayer
SPIE - The International Society of Optical Engineering |
SPIE - The International Society of Optical Engineering |
11
Conference Proceedings
Optical Transitions and Recombination Lifetimes in GaN and InGaN Epilayers, and InGaN/GaN and GaN/AlGaN Multiple Quantum Wells
MRS - Materials Research Society |
Materials Research Society |
Materials Research Society |