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Improvement of crosstalk on 5M CMOS image sensor with 1.7x1.7μm2 pixels

Author(s):
C. Koo ( Samsung Electronics Co., Ltd. (South Korea) )
H. Kim ( Samsung Electronics Co., Ltd. (South Korea) )
K. Paik ( Samsung Electronics Co., Ltd. (South Korea) )
D. Park ( Samsung Electronics Co., Ltd. (South Korea) )
K. Lee ( Samsung Electronics Co., Ltd. (South Korea) )
Y. Park ( Samsung Electronics Co., Ltd. (South Korea) )
C. Moon ( Samsung Electronics Co., Ltd. (South Korea) )
S. Lee ( Samsung Electronics Co., Ltd. (South Korea) )
S. Hwang ( Samsung Electronics Co., Ltd. (South Korea) )
D. Lee ( Samsung Electronics Co., Ltd. (South Korea) )
J. Kong ( Samsung Electronics Co., Ltd. (South Korea) )
6 more
Publication title:
Ultrafast phenomena in semiconductors and nanostructure materials XI and semiconductor photodetectors IV : 22-24 January 2007, San Jose, California, USA
Title of ser.:
Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:
6471
Pub. Year:
2007
Pub. info.:
Bellingham, Wash.: SPIE - The International Society of Optical Engineering
ISSN:
0277786X
ISBN:
9780819465849 [0819465844]
Language:
English
Call no.:
P63600/6471
Type:
Conference Proceedings

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