The effect of junction temperature on the optoelectrical properties of green InGaN/GaN multiple quantum well light-emitting diodes

The effect of junction temperature on the optoelectrical properties of green InGaN/GaN multiple quantum well light-emitting diodes

Author(s):

W. Chen ( Chang Gung Univ. (Taiwan) )

D. Kuo ( Chang Gung Univ. (Taiwan) )

C. Hung ( Chang Gung Univ. (Taiwan) )

C. Ke ( Chang Gung Univ. (Taiwan) )

H. Shen ( Chang Gung Univ. (Taiwan) )

J. Wang ( Chang Gung Univ. (Taiwan) )

Y. Wu ( Chang Gung Univ. (Taiwan) )

T. Nee ( Chang Gung Univ. (Taiwan) )

3 more

Publication title:

Physics and simulation of optoelectronic devices XV : 22-25 January 2007, San Jose, California, USA

Title of ser.:

Proceedings of SPIE - the International Society for Optical Engineering

Ser. no.:

6468

Pub. Year:

2007

Pub. info.:

Bellingham, Wash.: SPIE - The International Society of Optical Engineering

ISSN:

0277786X

ISBN:

9780819465818 [081946581X]

Language:

English

Call no.:

P63600/6468

Type:

Conference Proceedings

Details

TDL ID:	ZA00046776
Series ID:	PA00000029
Conf. info. (Name):	Photonics West - Optoelectronic Materials and Devices : Physics and Simulation of Optoelectronic Devices
Conf. info. (Number):	2007 : 15th
Conf. info. (Venue):	San Jose, CA, USA
Conf. info. (Date):	2007.01.22-2007.01.25

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