Highly reliable high-power AlGaAs/GaAs 808 nm diode laser bars

Highly reliable high-power AlGaAs/GaAs 808 nm diode laser bars

Author(s):

R. Hulsewede ( Jenoptik Diode Lab GmbH (Germany) )

H. Schulze ( Jenoptik Diode Lab GmbH (Germany) )

J. Sebastian ( Jenoptik Diode Lab GmbH (Germany) )

D. Schroder ( Jenoptik Laserdiode GmbH (Germany) )

J. Meusel ( Jenoptik Laserdiode GmbH (Germany) )

P. Hennig ( Jenoptik Laserdiode GmbH (Germany) )

1 more

Publication title:

High-Power Diode Laser Technology and Applications V

Title of ser.:

Proceedings of SPIE - the International Society for Optical Engineering

Ser. no.:

6456

Pub. date:

2007

Vol.:

6456

Pub. info.:

Bellingham, Wash.: SPIE - The International Society of Optical Engineering

ISSN:

0277786X

ISBN:

9780819465696 [0819465690]

Language:

English

Call no.:

P63600/6456

Type:

Conference Proceedings

Details

TDL ID:	ZA00046764
Series ID:	PA00000029
Conf. info. (Name):	SPIE LASE : High-Power Diode Laser Technology and Applications
Conf. info. (Number):	2007 : 5th
Conf. info. (Venue):	San Jose, California, USA
Conf. info. (Date):	2007.01.22-2007.01.24

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