Nanocavity Buffer Induced by Gas Ion Implantation in Silicon Substrate for Strain Relaxation of Heteroepitaxial Si1-xGex/Si Thin Layers

Nanocavity Buffer Induced by Gas Ion Implantation in Silicon Substrate for Strain Relaxation of Heteroepitaxial Si1-xGex/Si Thin Layers

Author(s):

Mahfoudh Raissi

Publication title:

Semiconductor defect engineering--materials, synthetic structures and devices II : symposium held April 9-13, 2007, San Francisco, California, U.S.A.

Title of ser.:

Materials Research Society symposium proceedings

Ser. no.:

994

Pub. Year:

2007

Page(from):

143

Page(to):

148

Pages:

6

Pub. info.:

Warrendale, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781558999541 [155899954X]

Language:

English

Call no.:

M23500/994

Type:

Conference Proceedings

Details

TDL ID:	ZA00046631
Series ID:	PA00000011
Conf. info. (Name):	MRS Spring Meeting : Symposium F
Conf. info. (Number):	2007
Conf. info. (Venue):	San Francisco, California, USA
Conf. info. (Date):	2007.04.09-2007.04.13

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