Arsenic in ZnO and GaN: Substitutional Cation or Anion Sites?
- Author(s):
Ulrich Wahl Joao Guilherme Correia Elisabete Rita Ana Claudia Marques Eduardo Alves Jose Carvalho Soares - Publication title:
- Semiconductor defect engineering--materials, synthetic structures and devices II : symposium held April 9-13, 2007, San Francisco, California, U.S.A.
- Title of ser.:
- Materials Research Society symposium proceedings
- Ser. no.:
- 994
- Pub. Year:
- 2007
- Page(from):
- 3
- Page(to):
- 14
- Pages:
- 12
- Pub. info.:
- Warrendale, Pa.: Materials Research Society
- ISSN:
- 02729172
- ISBN:
- 9781558999541 [155899954X]
- Language:
- English
- Call no.:
- M23500/994
- Type:
- Conference Proceedings
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