Predictive Model for B Diffusion in Strained SiGe Based on Atomistic Calculations

Predictive Model for B Diffusion in Strained SiGe Based on Atomistic Calculations

Author(s):

Publication title:

Transistor scaling--methods, materials and modeling : symposium held April 18-19, 2006, San Francisco, California, U.S.A.

Title of ser.:

Materials Research Society symposium proceedings

Ser. no.:

913

Pub. Year:

2006

Page(from):

179

Page(to):

184

Pages:

6

Pub. info.:

Warrendale, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781558998698 [1558998691]

Language:

English

Call no.:

M23500/913

Type:

Conference Proceedings

Details

TDL ID:	ZA00046617
Series ID:	PA00000011
Conf. info. (Name):	MRS Spring Meeting : Symposium D
Conf. info. (Number):	2006
Conf. info. (Venue):	San Francisco, California, USA
Conf. info. (Date):	2006.04.18-2006.04.19

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