A Physically Based Quantum Correction Model for DG MOSFETs
- Author(s):
- Publication title:
- Transistor scaling--methods, materials and modeling : symposium held April 18-19, 2006, San Francisco, California, U.S.A.
- Title of ser.:
- Materials Research Society symposium proceedings
- Ser. no.:
- 913
- Pub. Year:
- 2006
- Page(from):
- 163
- Page(to):
- 166
- Pages:
- 4
- Pub. info.:
- Warrendale, Pa.: Materials Research Society
- ISSN:
- 02729172
- ISBN:
- 9781558998698 [1558998691]
- Language:
- English
- Call no.:
- M23500/913
- Type:
- Conference Proceedings
Similar Items:
1
Conference Proceedings
Simulation of Partially Depleted SOI MOSFETs using an Improved Hydrodynamic Transport Model
SPIE-The International Society for Optical Engineering |
Electrochemical Society |
Electrochemical Society |
8
Conference Proceedings
Modelling Discontinuous Dynamic Recrystallization Using a Physically-Based Model for Nucleation
Trans Tech Publications |
3
Conference Proceedings
Stochastic Models to Represent the Temporal Variability of Global Average Radiation Budget, Cloudiness and Temperature
Springer |
Electrochemical Society |
4
Conference Proceedings
Efficient Calculation of Lifetime Based Direct Turmeling Through Stacked Dielectrics
Electrochemical Society |
kluwer Academic Publishers |
Electrochemical Society |
ESA Publications Division |
Trans Tech Publications |
American Society of Mechanical Engineers |