Enhanced Antimony Activation for Ultra-Shallow Junctions in Strained Silicon | 東京工業大学附属図書館文献データベース

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Enhanced Antimony Activation for Ultra-Shallow Junctions in Strained Silicon

Author(s):

Publication title:

Doping engineering for device fabrication : symposium held April 18-19, 2006, San Francisco, California, U.S.A.

Title of ser.:

Materials Research Society symposium proceedings

Ser. no.:

912

Pub. Year:

2006

Page(from):

59

Page(to):

64

Pages:

6

Pub. info.:

Warrendale, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781558998681 [1558998683]

Language:

English

Call no.:

M23500/912

Type:

Conference Proceedings

Details

TDL ID:	ZA00046616
Series ID:	PA00000011
Conf. info. (Name):	MRS Spring Meeting : Symposium C
Conf. info. (Number):	2006
Conf. info. (Venue):	San Francisco, California, USA
Conf. info. (Date):	2006.04.18-2006.04.19

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