Deep Levels in 4H Silicon Carbide Epilayers Induced by Neutron-Irradiation up to 10^16 n/cm2
- Author(s):
- Publication title:
- Silicon carbide 2006--materials, processing and devices : symposium held April 18-20, 2006, San Francisco, California, U.S.A.
- Title of ser.:
- Materials Research Society symposium proceedings
- Ser. no.:
- 911
- Pub. Year:
- 2006
- Page(from):
- 237
- Page(to):
- 246
- Pages:
- 10
- Pub. info.:
- Warrendale, Pa.: Materials Research Society
- ISSN:
- 02729172
- ISBN:
- 9781558998674 [1558998675]
- Language:
- English
- Call no.:
- M23500/911
- Type:
- Conference Proceedings
Similar Items:
Trans Tech Publications |
7
Conference Proceedings
Electrical and Optical Characterization of Electron Irradiated X Rays Detectors Based on 4H-SiC Epitaxial Layers
Trans Tech Publications |
2
Conference Proceedings
Deep Levels Induced by High Fluence Proton Irradiation in Undoped GaAs Diodes
MRS - Materials Research Society |
Materials Research Society |
Materials Research Society |
Materials Research Society |
Trans Tech Publications |
10
Conference Proceedings
Imaging of Extended Defects by Quenched Infra-red Beam Induced Currents ( Q-IRBIC )
Plenum Press |
5
Conference Proceedings
Role of Deep Levels in DC Current Aging of GaN/InGaN Light-Emitting Diodes Studied by Capacitance and Photocurrent spectroscopy
Materials Research Society |
Electrochemical Society |
Trans Tech Publications |
MRS - Materials Research Society |