Optical, Electrical and Lifetime Characterization of In-Grown Stacking Faults in 4H-SiC

Optical, Electrical and Lifetime Characterization of In-Grown Stacking Faults in 4H-SiC

Author(s):

Joshua David Caldwell

Publication title:

Silicon carbide 2006--materials, processing and devices : symposium held April 18-20, 2006, San Francisco, California, U.S.A.

Title of ser.:

Materials Research Society symposium proceedings

Ser. no.:

911

Pub. Year:

2006

Page(from):

187

Page(to):

192

Pages:

6

Pub. info.:

Warrendale, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781558998674 [1558998675]

Language:

English

Call no.:

M23500/911

Type:

Conference Proceedings

Details

TDL ID:	ZA00046615
Series ID:	PA00000011
Conf. info. (Name):	MRS Spring Meeting : Symposium B
Conf. info. (Number):	2006
Conf. info. (Venue):	San Francisco, California, USA
Conf. info. (Date):	2006.04.18-2006.04.20

Similar Items:

1 Conference Proceedings Influence of Shockley Stacking Fault Expansion and Contraction on the Electrical Behavior of 4H-SiC DMOSFETs and MPS Diodes Joshua David Caldwell, Robert E. Stahlbush, Eugene A. Imhoff, Orest J. Glembocki, Karl D. Hobart, Marko J. Tadjer, … Materials Research Society	7 Conference Proceedings Ultraviolet Photoluminescence Imaging of Stacking Fault Contraction in 4H-SiC Epitaxial Layers N.A. Mahadik, R.E. Stahlbush, J.D. Caldwell, K.D. Hobart Trans Tech Publications
2 Conference Proceedings Non-Destructive Electro- and Photo-Luminescence Imaging of Dislocations in SiC Epitaxy Kendrick X. Liu, Robert E. Stahlbush, Joshua D. Caldwell, Karl D. Hobart, Francis J. Kub, Joseph J. Sumakeris Materials Research Society	8 Conference Proceedings Influence of Temperature on the Saturation of the Forward Voltage Drift in SiC Pin Diodes J.D. Caldwell, R. Stahlbush, O. Glembocki, K. Hobart Electrochemical Society
3 Conference Proceedings Temperature Dependence of Shockley Stacking Fault Expansion and Contraction in 4H-SiC p-i-n Diodes J.D. Caldwell, R.E. Stahlbush, O.J. Glembocki, K.D. Hobart, K.X. Liu Trans Tech Publications	9 Conference Proceedings Improved GaN Homo-Junction, Ultraviolet, Light-Emitting Diodes Grown on Step- Free 4H-SiC Mesas J. D. Caldwell, M. Mastro, K. D. Hobart, O. Glembocki, C. R. Eddy, N. Bassim, M. Tadjer, A. Holm, R. Henry, M. Ywigg, P. … Electrochemical Society
4 Conference Proceedings Determination of the Core-structure of Shockley Partial Dislocations in 4H-SiC Yi Chen, Ning Zhang, Xianrong Huang, Joshua D Caldwell, Kendrick X Liu, Robert E Stahlbush, Michael Dudley Materials Research Society	10 Conference Proceedings SiC Substrate Doping Profiles Using Commercial Optical Scanners Caldwell, J.D., Glembocki, O.J., Hansen, D.M., Chung, G., Hobart, K.D., Kub, F.J. Trans Tech Publications
5 Conference Proceedings Interaction Between Recombination Enhanced Dislocation Glide Process Activated Basal Stacking Faults and Threading Dislocations in 4H-Silicon Carbide Epitaxial … Yi Chen, Michael Dudley, Kendrick X. Liu, Robert E. Stahlbush Materials Research Society	11 Conference Proceedings Nanoscale Features Grown by MBE on Nonplanar Patterned Si Substrates Hobart, Karl D., Kub, Fritz J., Gray, Henry F., Twigg, Mark E., Park, Doewon, Thompson, Phillip E. MRS - Materials Research Society
6 Conference Proceedings On the Luminescence and Driving Force of Stacking Faults in 4H-SiC J.D. Caldwell, A.J. Giles, R.E. Stahlbush, M.G. Ancona, O.J. Glembocki Trans Tech Publications	12 Conference Proceedings Influence of in-Grown Stacking Faults on Electrical Characteristics of 4H-SiC Pin Diode with Long Carrier Lifetime K. Nakayama, A. Tanaka, K. Asano, T. Miyazawa, H. Tsuchida Trans Tech Publications

1

2

3

4

5

6

7

8

9

10

11

12