Blank Cover Image

Development of a High-Growth Rate 3C-SiC on Si CVD Process

Author(s):
Publication title:
Silicon carbide 2006--materials, processing and devices : symposium held April 18-20, 2006, San Francisco, California, U.S.A.
Title of ser.:
Materials Research Society symposium proceedings
Ser. no.:
911
Pub. Year:
2006
Page(from):
79
Page(to):
84
Pages:
6
Pub. info.:
Warrendale, Pa.: Materials Research Society
ISSN:
02729172
ISBN:
9781558998674 [1558998675]
Language:
English
Call no.:
M23500/911
Type:
Conference Proceedings

Similar Items:

1 Conference Proceedings Increased Growth Rates of 3C-SiC on Si (100) Substrates via HCl Growth Additive

M. Reyes, Y. Shishkin, S. Harvey, S.E. Saddow

Trans Tech Publications
7 Conference Proceedings CVD of 6H-SiC on Non-Basal Quasi Polar Faces

Y. Shishkin, S.P. Rao, O. Kordina, I. Agafonov, A.A. Maltsev, J. Hassan, A. Henry, C. Moisson, S.E. Saddow

Trans Tech Publications
2 Conference Proceedings Growth of 3C-SiC on Si Molds for MEWS Applications

Reyes, M., Waits, M., Harvey, S., Shishkin, Y., Geil, B.R., Wolan, J.T., Saddow, S.E.

Trans Tech Publications
8 Conference Proceedings Computational Modeling for the Development of CVD SiC Epitaxial Growth Processes

Melnychuk, G., Koshka, Y., Yingquan, S., Mazzola, M., Pittman, C.U., Jr.

Trans Tech Publications
3 Conference Proceedings High Epitaxial Growth Rate of 4H-SiC Using Horizontal Hot-Wall CVD

Myers, R.L., Shishkin, Y., Kordina, O., Haselbarth, I., Saddow, S.E.

Trans Tech Publications
9 Conference Proceedings Comparison of 3C-SiC Films Grown By CVD on Si(111) and Si(211) Substrates

Wolan, J.T., Grayson, B.A., Graves, M., Bledsoe, M., Kirchner, K., Saddow, S.E.

Materials Research Society
4 Conference Proceedings Increased Growth Rate in a SiC CVD Reactor Using HCI as a Growth Additive

Myers, R., Kordina, O., Shishkin, Z., Rao, S., Everly, R., Saddow, S. E.

Trans Tech Publications
10 Conference Proceedings Regrowth of 3C-SiC on CMP Treated 3C-SiC/Si Epitaxial Layers

Mank, H., Moisson, C., Turover, D., Twigg, M., Saddow, S. E.

Trans Tech Publications
5 Conference Proceedings CVD Epitaxial Growth of 4H-SiC on Porous SiC Substrates

Shishkin, Y., Ke, Y., Yan, F., Devaty, R.P., Choyke, W.J., Saddow, S.E.

Trans Tech Publications
11 Conference Proceedings Chloride-Based CVD at High Growth Rates on 3″ Vicinal Off-Angles SiC Wafers

S. Leone, A. Henry, O. Kordina, E. Janzén

Trans Tech Publications
6 Conference Proceedings Analysis of SiC CVD Growth in a Horizontal Hot-Wall Reactor by Experiment and 3D Modelling

Y. Shishkin, R.L. Myers-Ward, S.E. Saddow, A. Galyukov, A. Vorob'ev, D. Brovin, D. Bazarevskiy, R. Talalaev, Y.N. …

Trans Tech Publications
12 Conference Proceedings Growth of Single Crystal 3C-SiC(111) on a Poly-Si Seed Layer

C. Locke, C.L. Frewin, J. Wang, S.E. Saddow

Trans Tech Publications
1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12