Effect of Hydrogen Dilution on Structure and Electronic Properties of Ge:H and GeγSi1-γ Films Deposited by Low Frequency Plasma

Effect of Hydrogen Dilution on Structure and Electronic Properties of Ge:H and GeγSi1-γ Films Deposited by Low Frequency Plasma

Author(s):

A. Kosarev

Publication title:

Amorphous and polycrystalline thin-film silicon science and technology--2006 : symposium held April 18-21, 2006, San Francisco, California, U.S.A.

Title of ser.:

Materials Research Society symposium proceedings

Ser. no.:

910

Pub. Year:

2007

Page(from):

157

Page(to):

162

Pages:

6

Pub. info.:

Warrendale, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781558998667 [1558998667]

Language:

English

Call no.:

M23500/910

Type:

Conference Proceedings

Details

TDL ID:	ZA00046614
Series ID:	PA00000011
Conf. info. (Name):	MRS Spring Meeting : Symposium A
Conf. info. (Number):	2006
Conf. info. (Venue):	San Francisco, California, USA
Conf. info. (Date):	2006.04.18-2006.04.21

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