Time-Dependent Dielectric Breakdown of Thermal Oxides on 4H-SiC
- Author(s):
- Publication title:
- Silicon carbide and related materials 2006 : ECSCRM 2006, Proceedings of the 6th European Conference on Silicon Carbide and Related Materials, Newcastle upon Tyne, UK, September 2006
- Title of ser.:
- Materials science forum
- Ser. no.:
- 556-557
- Pub. Year:
- 2007
- Page(from):
- 675
- Page(to):
- 678
- Pages:
- 4
- Pub. info.:
- Stafa-Zuerich: Trans Tech Publications
- ISSN:
- 02555476
- ISBN:
- 9780878494422 [0878494421]
- Language:
- English
- Call no.:
- M23650
- Type:
- Conference Proceedings
Similar Items:
Trans Tech Publications |
7
Conference Proceedings
Time Dependent Dielectric Breakdown of Thermally Evaporated HfD2 for Nanoscale Device
Electrochemical Society |
2
Conference Proceedings
Correlation between Thermal Oxide Breakdown and Defects in n-Type 4H-SiC Epitaxial Wafers
Trans Tech Publications |
Trans Tech Publications |
Trans Tech Publications |
9
Conference Proceedings
Low Electric Field Time-Dependent Dielectric Breakdown for BEOL Capacitor Application
Electrochemical Society |
Electrochemical Society |
Trans Tech Publications |
Trans Tech Publications |
11
Conference Proceedings
Percolation Model For The Extreme-Value Statistics Of Dielectric Breakdown In Rapid-Thermal Oxides
Electrochemical Society |
6
Conference Proceedings
Direct Observation of Dielectric Breakdown Spot in Thermal Oxides on 4H-SiC(0001) Using Conductive Atomic Force Microscopy
Trans Tech Publications |
Trans Tech Publications |