Optimizing the Thermally Oxidized 4H-SiC MOS Interface for P-Channel Devices
- Author(s):
- Publication title:
- Silicon carbide and related materials 2006 : ECSCRM 2006, Proceedings of the 6th European Conference on Silicon Carbide and Related Materials, Newcastle upon Tyne, UK, September 2006
- Title of ser.:
- Materials science forum
- Ser. no.:
- 556-557
- Pub. Year:
- 2007
- Page(from):
- 667
- Page(to):
- 670
- Pages:
- 4
- Pub. info.:
- Stafa-Zuerich: Trans Tech Publications
- ISSN:
- 02555476
- ISBN:
- 9780878494422 [0878494421]
- Language:
- English
- Call no.:
- M23650
- Type:
- Conference Proceedings
Similar Items:
Trans Tech Publications |
Trans Tech Publications |
Trans Tech Publications |
Trans Tech Publications |
Trans Tech Publications |
Trans Tech Publications |
Trans Tech Publications |
Trans Tech Publications |
5
Conference Proceedings
Effect of Recombination-Induced Stacking Faults on Majority Carrier Conduction and Reverse Leakage Current on 10 kV SiC DMOSFETs
Trans Tech Publications |
11
Conference Proceedings
Next Generation Planar 1700 V, 20 mΩ 4H-SiC DMOSFETs with Low Specific On-Resistance and High Switching Speed
Trans Tech Publications |
Trans Tech Publications |
12
Conference Proceedings
Ellipsometric and MEIS Studies of 4H-SiC/Si/SiO2 and 4H-SiC/SiO2 Interfaces for MOS Devices
Trans Tech Publications |