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Electrical Properties of Atomic-Layer-Deposited La2O3/Thermal-Nitrided SiO2 Stacking Dielectric on 4H-SiC(0001)

Author(s):
J.H. Moon
K.Y. Cheong
D.I. Eom
H.K. Song
J.H. Yim
J.H. Lee
H.J. Na
W. Bahng
N.K. Kim
H.J. Kim
5 more
Publication title:
Silicon carbide and related materials 2006 : ECSCRM 2006, Proceedings of the 6th European Conference on Silicon Carbide and Related Materials, Newcastle upon Tyne, UK, September 2006
Title of ser.:
Materials science forum
Ser. no.:
556-557
Pub. date:
2007
Vol.:
556-557
Page(from):
643
Page(to):
646
Pages:
4
Pub. info.:
Stafa-Zuerich: Trans Tech Publications
ISSN:
02555476
ISBN:
9780878494422 [0878494421]
Language:
English
Call no.:
M23650
Type:
Conference Proceedings

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