Modification of Surface Layer during High Temperature Annealing and its Effects on the SiC Diode Characteristics

Modification of Surface Layer during High Temperature Annealing and its Effects on the SiC Diode Characteristics

Author(s):

W. Bahng

Publication title:

Silicon carbide and related materials 2006 : ECSCRM 2006, Proceedings of the 6th European Conference on Silicon Carbide and Related Materials, Newcastle upon Tyne, UK, September 2006

Title of ser.:

Materials science forum

Ser. no.:

556-557

Pub. Year:

2007

Page(from):

595

Page(to):

598

Pages:

4

Pub. info.:

Stafa-Zuerich: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878494422 [0878494421]

Language:

English

Call no.:

M23650

Type:

Conference Proceedings

Details

TDL ID:	ZA00046610
Series ID:	PA00000012
Conf. info. (Name):	European Conference on Silicon Carbide and Related Materials
Conf. info. (Number):	6th
Conf. info. (Venue):	Newcastle upon Tyne, UK
Conf. info. (Date):	2006.09.00

Similar Items:

1 Conference Proceedings Post Annealing Etch Process for Improved Reverse Characteristics of 4H-SiC Diode I.H. Kang, W. Bahng, S.J. Joo, S.C. Kim, N.K. Kim Trans Tech Publications	7 Conference Proceedings FLR Geometry Dependence of Breakdown Voltage Characteristics for JBS-Assisted FLR SiC-SBD S.J. Kim, S. Kim, S.C. Kim, I.H. Kang, K.H. Lee, T. Matsuoka Trans Tech Publications
2 Conference Proceedings Selective Etching of Micropipes During Initial Homoepitaxial Growth Stage on Nearly On-Axis 4H-SiC Substrates Bahng, W., Cheong, H.J., Kang, I.H., Kim, S.C., Kim, K.H., Kim, N.K. Trans Tech Publications	8 Conference Proceedings Electrical Properties of Atomic-Layer-Deposited La2O3/Thermal-Nitrided SiO2 Stacking Dielectric on 4H-SiC(0001) J.H. Moon, K.Y. Cheong, D.I. Eom, H.K. Song, J.H. Yim, J.H. Lee, H.J. Na, W. Bahng, N.K. Kim, H.J. Kim Trans Tech Publications
3 Conference Proceedings Effect of the Doping Concentration and Space of Both p-Grid and Field Limiting Ring on 4H-SiC Junction Barrier Schottky Diode with Single Ion Implantation … I.H. Kang, J.Y. Song, S.J. Joo, W. Bahng, S.C. Kim Trans Tech Publications	9 Conference Proceedings Damage Relaxation Pre-Activation Anneal in Al-Implanted SiC Bahng, W., Song, G.H., Kim, N.K., Kim, S.C., Seo, K.S., Kim, H.W., Kim, E.D. Trans Tech Publications
4 Conference Proceedings Design and Characterization of 50W Switch Mode Power Supply Using Normally-On SiC JFET I.H. Kang, S.J. Joo, W. Bahng, S.C. Kim, N.K. Kim Trans Tech Publications	10 Conference Proceedings 4H-SiC p-n Diode using Internal Ring (IR) Termination Technique Song, G.H., Kim, H.W., Bahng, W., Kim, S.C., Kim, N.K. Trans Tech Publications
5 Conference Proceedings Numerical Investigation of the DC and RF Performances for a 4H-SiC Double Delta-Doped Channel MESFET Having Various Delta-Doping Concentrations I.H. Kang, W. Bahng, S.C. Kim, S.J. Joo, N.K. Kim Trans Tech Publications	11 Conference Proceedings Characteristics of Post-Nitridation Rapid-Thermal Annealed Gate Oxide Grown on 4H-SiC Cheong, K. Y., Bahng, W., Kim, N. K. Trans Tech Publications
6 Conference Proceedings Impact of Stacking Fault on the I-V Characteristics of 4H-SiC Schottky Barrier Diode H.J. Jung, S.B. Yun, I.H. Kang, J.H. Moon, W.J. Kim Trans Tech Publications	12 Conference Proceedings Breakdown Voltage Characteristics of FLR-Assisted SiC-SBD Formed by Aluminum Metal Junction Edge Termination S.J. Kim, Y.S. Choi, S.J. Yu, S.C. Kim, W. Bahng, K.H. Lee Trans Tech Publications

1

2

3

4

5

6

7

8

9

10

11

12