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Mechanisms of Decrease in Hole Concentration in Al-Doped 4H-SiC by Irradiation of 200 keV Electrons

Author(s):
H. Matsuura
N. Minohara
Y. Inagawa
M. Takahashi
T. Ohshima
H. Itoh
1 more
Publication title:
Silicon carbide and related materials 2006 : ECSCRM 2006, Proceedings of the 6th European Conference on Silicon Carbide and Related Materials, Newcastle upon Tyne, UK, September 2006
Title of ser.:
Materials science forum
Ser. no.:
556-557
Pub. date:
2007
Vol.:
556-557
Page(from):
379
Page(to):
382
Pages:
4
Pub. info.:
Stafa-Zuerich: Trans Tech Publications
ISSN:
02555476
ISBN:
9780878494422 [0878494421]
Language:
English
Call no.:
M23650
Type:
Conference Proceedings

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