Low Trap Concentration and Low Basal-Plane Dislocation Density in 4H-SiC Epilayers Grown at High Growth Rate

Low Trap Concentration and Low Basal-Plane Dislocation Density in 4H-SiC Epilayers Grown at High Growth Rate

Author(s):

Publication title:

Silicon carbide and related materials 2006 : ECSCRM 2006, Proceedings of the 6th European Conference on Silicon Carbide and Related Materials, Newcastle upon Tyne, UK, September 2006

Title of ser.:

Materials science forum

Ser. no.:

556-557

Pub. Year:

2007

Page(from):

129

Page(to):

132

Pages:

4

Pub. info.:

Stafa-Zuerich: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878494422 [0878494421]

Language:

English

Call no.:

M23650

Type:

Conference Proceedings

Details

TDL ID:	ZA00046610
Series ID:	PA00000012
Conf. info. (Name):	European Conference on Silicon Carbide and Related Materials
Conf. info. (Number):	6th
Conf. info. (Venue):	Newcastle upon Tyne, UK
Conf. info. (Date):	2006.09.00

Similar Items:

1 Conference Proceedings Growth and Electrical Characterization of 4H-SiC Epilayers T. Kimoto, K. Danno, T. Hori, H. Matsunami Trans Tech Publications	7 Conference Proceedings Investigation of Basal Plane Dislocations in the 4H-SiC Epilayers Grown on {0001} Substrates Tsuehida, H., Miyanagi, T., Kamata, I., Nakamura, T., Izumi, K., Nakayama, K., Ishii, R., Asano, K., Sugawara, Y. Trans Tech Publications
2 Conference Proceedings Deep Hole Traps in As-Grown 4H-SiC Epilayers Investigated by Deep Level Transient Spectroscopy Danno, K., Kimoto, T. Trans Tech Publications	8 Conference Proceedings Deep Levels in Electron-Irradiated n- and p-type 4H-SiC Investigated by Deep Level Transient Spectroscopy K. Danno, T. Kimoto Trans Tech Publications
3 Conference Proceedings Midgap Levels in As-Grown 4H-SiC Epilayers Investigated by DLTS Danno, K., Kimoto, T., Matsunami, H. Trans Tech Publications	9 Conference Proceedings Fast Epitaxial Growth of Thick 4H-SiC with Specular Surface by Chimney-Type Vertical Hot-Wall Chemical Vapor Deposition Fujiwara, H., Danno, K., Kimoto, T., Tojo, T., Matsunami, H. Trans Tech Publications
4 Conference Proceedings Trials of Solution Growth of Dislocation-Free 4H-SiC Bulk Crystals K. Danno, S. Yamaguchi, H. Kimoto, K. Sato, T. Bessho Trans Tech Publications	10 Conference Proceedings Complete Micropipe Dissociation in 4H-SiC(03-38) Epitaxial Growth and its Impact on Reverse Characteristics of Schottky Barrier Diodes Kimoto, T., Danno, K., Fujihira, K., Shiomi, H., Matsunami, H. Trans Tech Publications
5 Conference Proceedings High-Speed Growth of High-Purity Epitaxial Layers with Specular Surface on 4H-SiC(000-1) Face Danno, K., Kimoto, T., Matsunami, H. Trans Tech Publications	11 Conference Proceedings Demonstration of High Quality 4H-SiC Epitaxial Growth with Extremely Low Basal Plane Dislocation Density T. Tanaka, N. Kawabata, Y. Mitani, N. Tomita, M. Tarutani Trans Tech Publications
6 Conference Proceedings In-Grown Stacking Faults Identified in 4H-SiC Epilayers Grown at High Growth Rate G. Feng, J. Suda, T. Kimoto Trans Tech Publications	12 Conference Proceedings Growth of Low Basal Plane Dislocation Density SiC Epitaxial Layers Zhang, Z.H., Sudarshan, T.S. Trans Tech Publications

1

2

3

4

5

6

7

8

9

10

11

12