Blank Cover Image

Developing an Effective and Robust Process for Manufacturing Bipolar SiC Power Devices

Author(s):
Publication title:
Silicon carbide and related materials 2006 : ECSCRM 2006, Proceedings of the 6th European Conference on Silicon Carbide and Related Materials, Newcastle upon Tyne, UK, September 2006
Title of ser.:
Materials science forum
Ser. no.:
556-557
Pub. Year:
2007
Page(from):
77
Page(to):
80
Pages:
4
Pub. info.:
Stafa-Zuerich: Trans Tech Publications
ISSN:
02555476
ISBN:
9780878494422 [0878494421]
Language:
English
Call no.:
M23650
Type:
Conference Proceedings

Similar Items:

1 Conference Proceedings Techniques for Minimizing the Basal Plane Dislocation Density in SiC Epilayers to Reduce Vf Drift in SiC Bipolar Power Devices

Sumakeris, J.J., Bergman, J.P., Das, M.K., Hallin, C., Hull, B.A., Janzen, E., Lendenmann, H., O'Loughlin, M.J., …

Trans Tech Publications
7 Conference Proceedings Structure of Carrot Derects in 4H-SiC Epilayers

Zhang, X., Ha, S., Benamara, M., Skowronski, M., Sumakeris, J.J., Ryu, S., Paisley, M.J., O'Loughlin, M.J.

Trans Tech Publications
2 Conference Proceedings Development of Epitaxial SiC Processes Suitable for Bipolar Power Devices

Sumakeris, J. J., Das, M. K., Ha, S., Hurt, E., Irvine, K., Paisley, M. J., O'Loughlin, M. J., Palmour, J. W., …

Trans Tech Publications
8 Conference Proceedings 1700V, 20A 4H-SiC DMOSFETs Optimized for High Temperature Operation

B.A. Hull, S.H. Ryu, J. Zhang, C. Jonas, M.J. O'Loughlin

Trans Tech Publications
3 Conference Proceedings Development of Large Area (up to 1.5 cm²) 4H-SiC 10 kV Junction Barrier Schottky Rectifiers

B.A. Hull, J.J. Sumakeris, M.J. O'Loughlin, Q.J. Zhang, J. Richmond

Trans Tech Publications
9 Conference Proceedings Defects Limiting Minorty Carrier Lifetime in 4H-SiC Epilayers

P. B. Klein, B. Shanabrook, S. Huh, A. Polyakov, M. Skowronski, J. Sumakeris, M. O'Loughlin

Electrochemical Society
4 Conference Proceedings SiC Epitaxial Growth on Multiple 100-mm Wafers and its Application to Power-Switching Devices

A.A. Burk, M.J. O'Loughlin, J.J. Sumakeris, C. Hallin, E. Berkman

Trans Tech Publications
10 Conference Proceedings Performance of 60 A, 1200 V 4H-SiC DMOSFETs

B.A. Hull, C. Jonas, S.H. Ryu, M.K. Das, M.J. O'Loughlin

Trans Tech Publications
5 Conference Proceedings Extremely Uniform, High Quality, SIC Epitaxy on 100-mm Substrates

J.J. Sumakeris, J. Henning, M.J. O'Loughlin, S. Sriram, V. Balakrishna

Trans Tech Publications
11 Conference Proceedings Approaches to Stabilizing the Forward Voltage of Bipolar SiC Devices

Sumakeris, J.J., Das, M., Hobgood, H.McD., Mueller, S.G., Paisley, M.J., Ha, S., Skowronski, M., Palmour, J.W., Carter, …

Trans Tech Publications
6 Conference Proceedings Deep Traps and Charge Carrier Lifetimes in 4H-SiC Epilayers

Huh, S.W., Sumakeris, J.J., Polyakov, A.Y., Skowronski, M., Klein, P.B., Shanabrook, B.V., O'Loughlin, M.J.

Trans Tech Publications
12 Conference Proceedings Evolution of Drift-Free, High Power 4H-SiC PiN Diodes

Das, M.K., Sumakeris, J.J., Hull, B.A., Richmond, J.

Trans Tech Publications
1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12