Field Effect Transistor with ZnS Active Layer on ITO/Glass Substrate

Field Effect Transistor with ZnS Active Layer on ITO/Glass Substrate

Author(s):

I.J. Back

Publication title:

Eco-materials processing and design VIII : ISEPD-8, proceedings of the 8th International Symposium on Eco-Materials Processing and Design, January 11-13, 2007, Kitakyushu, Japan

Title of ser.:

Materials science forum

Ser. no.:

544-545

Pub. Year:

2007

Page(from):

753

Page(to):

756

Pages:

4

Pub. info.:

Stafa-Zuerich, Switzerland: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878494316 [0878494316]

Language:

English

Call no.:

M23650

Type:

Conference Proceedings

Details

TDL ID:	ZA00046600
Series ID:	PA00000012
Conf. info. (Name):	ISEPD - International Symposium on Eco-Materials Processing and Design
Conf. info. (Number):	2007 : 8th
Conf. info. (Venue):	Kitakyushu, Japan
Conf. info. (Date):	2007.01.11-2007.01.13

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