65nm mask CD qualification on critical features through simulation based lithography verification [5853-132]

65nm mask CD qualification on critical features through simulation based lithography verification [5853-132]

Author(s):

Publication title:

Photomask and Next-Generation Lithography Mask Technology XII

Title of ser.:

Proceedings of SPIE - the International Society for Optical Engineering

Ser. no.:

5853

Pub. Year:

2005

Pt.:

1

Page(from):

380

Page(to):

386

Pages:

7

Pub. info.:

Bellingham, Wash.: SPIE - The International Society of Optical Engineering

ISSN:

0277786X

ISBN:

9780819458537 [0819458538]

Language:

English

Call no.:

P63600/5853

Type:

Conference Proceedings

Details

TDL ID:	ZA00016424
Series ID:	PA00000029
Conf. info. (Name):	Photomask and next-generation lithography mask technology
Conf. info. (Number):	2005 : 12th
Conf. info. (Venue):	Yokohama, Japan
Conf. info. (Date):	2005.04.13-2005.04.15

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