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Nonlinear absorption of highly stacked InAs quantum dot layers on an InP(311) substrate (Invited Paper) [6393-09]

Author(s):
  • Isu, T. ( Institute of Information and Communications Technology (Japan), Japan Science and Technology Agency (Japan), and The Univ. of Tokushima (Japan) )
  • Inoue, J.
  • Akahane, J.
  • Sotobayashi ( National Institute of Information and Communications Technology (Japan) )
  • Tsuchiya, M. ( National Institute of Information and Communications Technology (Japan) and Japan Science and Technology Agency (Japan) )
Publication title:
Nanophotonics for Communication: Materials, Devices, and Systems III
Title of ser.:
Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:
6393
Pub. Year:
2006
Page(from):
639309
Pub. info.:
Bellingham, Wash.: SPIE - The International Society of Optical Engineering
ISSN:
0277786X
ISBN:
9780819464910 [0819464910]
Language:
English
Call no.:
P63600/6393
Type:
Conference Proceedings

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