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Size, areal density, and emission energy control of InAs self assemble quantum dots grown on GaAs by selective area molecular beam epitaxy [6129-17]

Author(s):
Lin, J. C. C. ( Univ. of Sheffield (United Kingdom) )
Hogg, R A ( Univ. of Sheffield (United Kingdom) )
Hopkinson, M. ( Univ. of Sheffield (United Kingdom) )
Fry, P W ( Univ. of Sheffield (United Kingdom) )
Ross, I M ( Univ. of Sheffield (United Kingdom) )
Cullis, A G ( Univ. of Sheffield (United Kingdom) )
Kolodka, R S ( Univ. of Sheffield (United Kingdom) )
Tartakovskii, A I ( Univ. of Sheffield (United Kingdom) )
Skolnick, M S ( Univ. of Sheffield (United Kingdom) )
4 more
Publication title:
Quantum Dots, Particles, and Nanoclusters III
Title of ser.:
Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:
6129
Pub. date:
2006
Page(from):
61290G
Pub. info.:
Bellingham, Wash.: SPIE - The International Society of Optical Engineering
ISSN:
0277786X
ISBN:
9780819461711 [0819461717]
Language:
English
Call no.:
P63600/6129
Type:
Conference Proceedings

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