Tunnel quantum well-on-dots InGaAs-lnAs high-gain medium for laser diodes [6129-09]

Tunnel quantum well-on-dots InGaAs-lnAs high-gain medium for laser diodes [6129-09]

Author(s):

Tokranov, V. ( Univ. at Albany/SUNY (USA) )
Yakimov, M. ( Univ. at Albany/SUNY (USA) )
van Eisden, J ( Univ. at Albany/SUNY (USA) )
Oktyabrsky, S. ( Univ. at Albany/SUNY (USA) )

Publication title:

Quantum Dots, Particles, and Nanoclusters III

Title of ser.:

Proceedings of SPIE - the International Society for Optical Engineering

Ser. no.:

6129

Pub. Year:

2006

Page(from):

612908

Pub. info.:

Bellingham, Wash.: SPIE - The International Society of Optical Engineering

ISSN:

0277786X

ISBN:

9780819461711 [0819461717]

Language:

English

Call no.:

P63600/6129

Type:

Conference Proceedings

Details

TDL ID:	ZA00016163
Series ID:	PA00000029
Conf. info. (Name):	Photonics West - Optoelectronic Materials and Devices : Quantum Dots, Particles, and Nanoclusters
Conf. info. (Number):	2006 : 3rd
Conf. info. (Venue):	San Jose, CA, USA
Conf. info. (Date):	2006.01.23-2006.01.24

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