Deep UV AIGaN light emitting diodes grown by gas source molecular beam epitaxy on sapphire and AIGaN/sapphire substrates (Invited Paper) [6121-29]

Deep UV AIGaN light emitting diodes grown by gas source molecular beam epitaxy on sapphire and AIGaN/sapphire substrates (Invited Paper) [6121-29]

Author(s):

Nikishin, S. ( Texas Tech Univ. (USA) )

Borisov, B. ( Texas Tech Univ. (USA) )

Kuryatkov, V. ( Texas Tech Univ. (USA) )

Usikov, A. ( TDI, Inc. (USA) )

Dmitriev, V. ( TDI, Inc. (USA) )

Holtz, M. ( Texas Tech Univ. (USA) )

1 more

Publication title:

Gallium Nitride Materials and Devices

Title of ser.:

Proceedings of SPIE - the International Society for Optical Engineering

Ser. no.:

6121

Pub. Year:

2006

Page(from):

61210T

Pub. info.:

Bellingham, Wash.: SPIE - The International Society of Optical Engineering

ISSN:

0277786X

ISBN:

9780819461636 [0819461636]

Language:

English

Call no.:

P63600/6121

Type:

Conference Proceedings

Details

TDL ID:	ZA00016155
Series ID:	PA00000029
Conf. info. (Name):	Photonics West - Optoelectronic Materials and Devices : Gallium Nitride Materials and Devices
Conf. info. (Number):	2006
Conf. info. (Venue):	San Jose, CA, USA
Conf. info. (Date):	2006.01.23-2006.01.25

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