Ferroelectric PZT/AIGaN/GaN field effecttransistors (Invited Paper) [6121-28]
- Author(s):
Kang, Y.-S. ( Virginia Commonwealth Univ.(USA) ) Xiao, B. ( Virginia Commonwealth Univ.(USA) ) Alivov, Ya. I. ( Virginia Commonwealth Univ.(USA) ) Fan, Q. ( Virginia Commonwealth Univ.(USA) ) Xie, J. ( Virginia Commonwealth Univ.(USA) ) Morkoc H ( Virginia Commonwealth Univ.(USA) ) Eddy Jr C R ( Boston Univ. (USA) ) - Publication title:
- Gallium Nitride Materials and Devices
- Title of ser.:
- Proceedings of SPIE - the International Society for Optical Engineering
- Ser. no.:
- 6121
- Pub. Year:
- 2006
- Page(from):
- 61210S
- Pub. info.:
- Bellingham, Wash.: SPIE - The International Society of Optical Engineering
- ISSN:
- 0277786X
- ISBN:
- 9780819461636 [0819461636]
- Language:
- English
- Call no.:
- P63600/6121
- Type:
- Conference Proceedings
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