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Review of recent efforts on the growth and characterization of nitride-based diluted magnetic semiconductors (Invited Paper) [6121-22]

Author(s):
Kane, M. H. ( Georgia Institute of Technology (USA) )
Strassburg, M. ( Georgia Institute of Technology (USA) )
Asghar, A. ( Georgia Institute of Technology (USA) )
Li, N. ( Georgia Institute of Technology (USA) )
Fenwick, W. ( Georgia Institute of Technology (USA) )
Ferguson, I. T. ( Georgia Institute of Technology (USA) )
1 more
Publication title:
Gallium Nitride Materials and Devices
Title of ser.:
Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:
6121
Pub. date:
2006
Page(from):
61210L
Pub. info.:
Bellingham, Wash.: SPIE - The International Society of Optical Engineering
ISSN:
0277786X
ISBN:
9780819461636 [0819461636]
Language:
English
Call no.:
P63600/6121
Type:
Conference Proceedings

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