Studies of electron trapping in III-nitride semiconductors (Invited Paper) [6121-18]

Studies of electron trapping in III-nitride semiconductors (Invited Paper) [6121-18]

Author(s):

Lopatiuk, O. ( Univ. of Central Florida (USA) )
Osinsky, A. ( SVT Associates (USA) )
Chernyak, L. ( Univ. of Central Florida (USA) )

Publication title:

Gallium Nitride Materials and Devices

Title of ser.:

Proceedings of SPIE - the International Society for Optical Engineering

Ser. no.:

6121

Pub. Year:

2006

Page(from):

61210H

Pub. info.:

Bellingham, Wash.: SPIE - The International Society of Optical Engineering

ISSN:

0277786X

ISBN:

9780819461636 [0819461636]

Language:

English

Call no.:

P63600/6121

Type:

Conference Proceedings

Details

TDL ID:	ZA00016155
Series ID:	PA00000029
Conf. info. (Name):	Photonics West - Optoelectronic Materials and Devices : Gallium Nitride Materials and Devices
Conf. info. (Number):	2006
Conf. info. (Venue):	San Jose, CA, USA
Conf. info. (Date):	2006.01.23-2006.01.25

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