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Growth and characterization of AIGaN/GaN epitaxial layers by MOCVD on SiC substrates for RF device applications (Invited Paper) [6121-13]

Author(s):
Sood, A. K. ( Magnolia Optical Technologies, Inc. (USA) )
Singh, R. ( Magnolia Optical Technologies, Inc. (USA) )
Puri, Y. R. ( Magnolia Optical Technologies, Inc. (USA) )
Clarke, F. W. ( U.S. Army Space and Missile Defense Command (USA) )
Laboutin, O. ( Kopin Corp. (USA) )
Deluca, P. M. ( Kopin Corp. (USA) )
Wesler, R. E. ( Kopin Corp. (USA) )
Deng, J. ( Lehigh Univ. (USA) )
Hwang, J. C. M. ( Lehigh Univ. (USA) )
4 more
Publication title:
Gallium Nitride Materials and Devices
Title of ser.:
Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:
6121
Pub. date:
2006
Page(from):
61210D
Pub. info.:
Bellingham, Wash.: SPIE - The International Society of Optical Engineering
ISSN:
0277786X
ISBN:
9780819461636 [0819461636]
Language:
English
Call no.:
P63600/6121
Type:
Conference Proceedings

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