Characterization of GaN epitaxial films grown on SiNx and TiNx porous network templates (Invited Paper) [6121-11]
- Author(s):
Xie, J. ( Virginia Commonwealth Univ. (USA) ) Fu, Y. ( Virginia Commonwealth Univ. (USA) ) Ozgur, U. ( Virginia Commonwealth Univ. (USA) ) Moon, Y. T. ( Virginia Commonwealth Univ. (USA) ) Yun, F. ( Virginia Commonwealth Univ. (USA) ) Morkoc, H. ( Virginia Commonwealth Univ. (USA) ) Everitt, H. O. ( Duke Univ. (USA) ) Sagar, A. ( Carnegie Mellon Univ. (USA) ) Feenstra, R. M. ( Carnegie Mellon Univ. (USA) ) Inoki, C. K. ( Univ of Albany (USA) ) Kuan, T. S. ( Univ of Albany (USA) ) Zhou, L ( Arizona State Univ (USA) ) Smith D. J ( Arizona State Univ (USA) ) - Publication title:
- Gallium Nitride Materials and Devices
- Title of ser.:
- Proceedings of SPIE - the International Society for Optical Engineering
- Ser. no.:
- 6121
- Pub. Year:
- 2006
- Page(from):
- 61210B
- Pub. info.:
- Bellingham, Wash.: SPIE - The International Society of Optical Engineering
- ISSN:
- 0277786X
- ISBN:
- 9780819461636 [0819461636]
- Language:
- English
- Call no.:
- P63600/6121
- Type:
- Conference Proceedings
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