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Quantum-structure dependent excitonic carrier dynamics of InxGal-xN/GaN multi-quantum-wells (Invited Paper) [6121-04]

Author(s):
Hong, S. ( Samsung Electro-Mechanics Co ., Ltd. (South Korea) )
Kim, Y. S. ( Samsung Electro-Mechanics Co ., Ltd. (South Korea) )
Yoon, Y.J. ( Samsung Electro-Mechanics Co ., Ltd. (South Korea) )
Park, J.S. ( Samsung Electro-Mechanics Co ., Ltd. (South Korea) )
Kim, B. K. ( Samsung Electro-Mechanics Co ., Ltd. (South Korea) )
Fomin, A. ( Samsung Electro-Mechanics Co ., Ltd. (South Korea) )
Lee, G. H. ( Samsung Electro-Mechanics Co ., Ltd. (South Korea) )
Kim, J.W. ( Samsung Electro-Mechanics Co ., Ltd. (South Korea) )
Cho, H.K. ( Sungkyunkwan Univ. (South Korea) )
Joo, T. ( Pohang Univ of Science and Technology (South Korea) )
5 more
Publication title:
Gallium Nitride Materials and Devices
Title of ser.:
Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:
6121
Pub. date:
2006
Page(from):
612105
Pub. info.:
Bellingham, Wash.: SPIE - The International Society of Optical Engineering
ISSN:
0277786X
ISBN:
9780819461636 [0819461636]
Language:
English
Call no.:
P63600/6121
Type:
Conference Proceedings

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