Growth of GaN on patterned GaN/sapphire substrates with various metallic masks by high pressure solution method (Invited Paper) [6121-02]

Growth of GaN on patterned GaN/sapphire substrates with various metallic masks by high pressure solution method (Invited Paper) [6121-02]

Author(s):

Bockowski, M. ( Institute of High Pressure Physics (Poland) )

Grzegory, I. ( Institute of High Pressure Physics (Poland) )

Nowak, G. ( Institute of High Pressure Physics (Poland) )

Kamler, G ( Institute of High Pressure Physics (Poland) )

Lucznik, B. ( Institute of High Pressure Physics (Poland) )

Wroblewski, P. ( Institute of High Pressure Physics (Poland) )

Kwiatkowski, P. ( Institute of High Pressure Physics (Poland) )

Jasik, K. ( Institute of High Pressure Physics (Poland) )

Krukowski, S. ( Institute of High Pressure Physics (Poland) )

Porowski, S. ( Institute of High Pressure Physics (Poland) )

5 more

Publication title:

Gallium Nitride Materials and Devices

Title of ser.:

Proceedings of SPIE - the International Society for Optical Engineering

Ser. no.:

6121

Pub. Year:

2006

Page(from):

612103

Pub. info.:

Bellingham, Wash.: SPIE - The International Society of Optical Engineering

ISSN:

0277786X

ISBN:

9780819461636 [0819461636]

Language:

English

Call no.:

P63600/6121

Type:

Conference Proceedings

Details

TDL ID:	ZA00016155
Series ID:	PA00000029
Conf. info. (Name):	Photonics West - Optoelectronic Materials and Devices : Gallium Nitride Materials and Devices
Conf. info. (Number):	2006
Conf. info. (Venue):	San Jose, CA, USA
Conf. info. (Date):	2006.01.23-2006.01.25

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