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Undoped InP sandwiched InGaAs p-i-n photodetector with partially p-doped photoabsorption layer grown on linearly graded metamorphic InxGal-xP buffered GaAs substrate [6119-21]

Author(s):
  • Liao, Y. S. ( National Chiao Tung Univ. (Taiwan) )
  • Lin, G. R. ( National Chiao Tung Univ. (Taiwan) )
  • Kuo, H. -C. ( National Chiao Tung Univ. (Taiwan) )
  • Feng, M. ( Univ. of Illinois at Urbana-Champaign (USA) )
Publication title:
Semiconductor photodetectors III : 25 January 2006, San Jose California, USA
Title of ser.:
Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:
6119
Pub. date:
2006
Page(from):
61190L
Pub. info.:
Bellingham, Wash.: SPIE - The International Society of Optical Engineering
ISSN:
0277786X
ISBN:
9780819461612 [081946161X]
Language:
English
Call no.:
P63600/6119
Type:
Conference Proceedings

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