Electronic characteristics of doped InAs/GaAs quantum dot photodetector: temperature dependent dark current and noise density [6119-05]

Electronic characteristics of doped InAs/GaAs quantum dot photodetector: temperature dependent dark current and noise density [6119-05]

Author(s):

Liao C C ( National Defense Univ (Taiwan) )

Fang S F ( Chung-Shan Institute of Science and Technology (Taiwan) )

Chen T C ( National Defense Univ (Taiwan) )

Chiang C D ( Chung-Shan Institute of Science and Technology (Taiwan) )

Yang S T ( Chung-Shan Institute of Science and Technology (Taiwan) )

Su W K ( National Defense Univ (Taiwan) )

1 more

Publication title:

Semiconductor photodetectors III : 25 January 2006, San Jose California, USA

Title of ser.:

Proceedings of SPIE - the International Society for Optical Engineering

Ser. no.:

6119

Pub. Year:

2006

Page(from):

611905

Pub. info.:

Bellingham, Wash.: SPIE - The International Society of Optical Engineering

ISSN:

0277786X

ISBN:

9780819461612 [081946161X]

Language:

English

Call no.:

P63600/6119

Type:

Conference Proceedings

Details

TDL ID:	ZA00016153
Series ID:	PA00000029
Conf. info. (Name):	Photonics West - Optoelectronic Materials and Devices : Semiconductor photodetectors
Conf. info. (Number):	2006 : 3rd
Conf. info. (Venue):	San Jose, CA, USA
Conf. info. (Date):	2006.01.25

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