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Leakage current analysis in AIGaInP/GainP multi-quantum well lasers by the electrical derivative method [6020-87]

Author(s):
Xu Y. ( Institute of Semiconductors (China) )
Li Y. ( Institute of Semiconductors (China) and E-O National Co., Ltd (China) )
Song G.
Gan Q. ( Institute of Semiconductors (China) )
Cao Q.
Guo L. ( Institute of Semiconductors (China) and E-O National Co., Ltd (China) )
Chen L. ( Institute of Semiconductors (China) )
2 more
Publication title:
Optoelectronic Materials and Devices for Optical Communications
Title of ser.:
Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:
6020
Pub. Year:
2005
Page(from):
60202F
Pub. info.:
Bellingham, Wash.: SPIE - The International Society of Optical Engineering
ISSN:
0277786X
ISBN:
9780819460516 [0819460516]
Language:
English
Call no.:
P63600/6020
Type:
Conference Proceedings

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