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10 Gbps operation of metamorphic InGaP buffered In0.53Ga0.47As p-i-n photodetector grown on GaAs substrate [6020-75]

Author(s):
Liao Y.-S.
Lin G.-R.
Lin C.-K.
Chu Y.-S.
Kuo H.-C. ( National Chiao Tung Univ. (Taiwan, China) )
Feng M. ( Univ. of Illinois at Urbana-Champaign (USA0 )
1 more
Publication title:
Optoelectronic Materials and Devices for Optical Communications
Title of ser.:
Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:
6020
Pub. date:
2005
Page(from):
602023
Page(to):
602023
Pages:
1
Pub. info.:
Bellingham, Wash.: SPIE - The International Society of Optical Engineering
ISSN:
0277786X
ISBN:
9780819460516 [0819460516]
Language:
English
Call no.:
P63600/6020
Type:
Conference Proceedings

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