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Investigation of the dependence of volume, cap layer and aspect ratio on the strain distribution and electronic structure of self-organized InAs/GaAs quantum dot {6020-39]

Author(s):
  • Liu Y. ( Beijing Univ. of Posts and Telecommunications (China) and Key Lab. Of Optical Communication and Lightwave Technologies (China) ) , ( Shijiazhuang Railway Institute (China) )
  • Yu Z. ( Beijing Univ. of Posts and Telecommunications (China) and Key Lab. Of Optical Communication and Lightwave Technologies (China) )
Publication title:
Optoelectronic Materials and Devices for Optical Communications
Title of ser.:
Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:
6020
Pub. Year:
2005
Page(from):
602014
Page(to):
602014
Pages:
1
Pub. info.:
Bellingham, Wash.: SPIE - The International Society of Optical Engineering
ISSN:
0277786X
ISBN:
9780819460516 [0819460516]
Language:
English
Call no.:
P63600/6020
Type:
Conference Proceedings

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