Evaluation of transparent etch stop layer phase shift mask patterning and comparison with the single trench undercut approach [5992-28]

Evaluation of transparent etch stop layer phase shift mask patterning and comparison with the single trench undercut approach [5992-28]

Author(s):

Rody, Y. ( Philips Semiconductors (France) )

Martin, P. ( Photronics France S.A.S. (France) )

Couderc, C. ( Philips Semiconductors (France) )

Sixt, P. ( Photronics, Inc. (USA) )

Gardin, C.

Lucas, K.

Patterson, K. ( Freescale Semiconductor Inc. (France) )

Miramond-Collet, C. ( STMicroelectronics (France) )

Belledent, J. ( Philips Semiconductors (France) )

Boone, R. ( Freescale Semiconductor Inc. (France) )

Borjon, A. ( Philips Semiconductors (France) )

Trouiller, Y. ( LETI-CEA (France) )

7 more

Publication title:

25th Annual BACUS Symposium on Photomask Technology

Title of ser.:

Proceedings of SPIE - the International Society for Optical Engineering

Ser. no.:

5992

Pub. Year:

2005

Pt.:

1

Page(from):

59920R

Pub. info.:

Bellingham, Wash.: SPIE - The International Society of Optical Engineering

ISSN:

0277786X

ISBN:

9780819460141 [0819460141]

Language:

English

Call no.:

P63600/5992

Type:

Conference Proceedings

Details

TDL ID:	ZA00016029
Series ID:	PA00000029
Conf. info. (Name):	SPIE Photomask Technology : Annual BACUS Symposium on Photomask Technology
Conf. info. (Number):	2005 : 25th
Conf. info. (Venue):	Monterey, California, USA
Conf. info. (Date):	2005.10.04-2005.10.07

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