A study of Cr to Mosi in situ dry etching process to reduce plasma induced defect [5992-25]

A study of Cr to Mosi in situ dry etching process to reduce plasma induced defect [5992-25]

Author(s):

Jang, I. -Y.

Han, W. S. ( Samsung Electronics Co., Ltd (South Korea) )

1 more

Publication title:

25th Annual BACUS Symposium on Photomask Technology

Title of ser.:

Proceedings of SPIE - the International Society for Optical Engineering

Ser. no.:

5992

Pub. Year:

2005

Pt.:

1

Page(from):

59920O

Pub. info.:

Bellingham, Wash.: SPIE - The International Society of Optical Engineering

ISSN:

0277786X

ISBN:

9780819460141 [0819460141]

Language:

English

Call no.:

P63600/5992

Type:

Conference Proceedings

Details

TDL ID:	ZA00016029
Series ID:	PA00000029
Conf. info. (Name):	SPIE Photomask Technology : Annual BACUS Symposium on Photomask Technology
Conf. info. (Number):	2005 : 25th
Conf. info. (Venue):	Monterey, California, USA
Conf. info. (Date):	2005.10.04-2005.10.07

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