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A study of Cr to Mosi in situ dry etching process to reduce plasma induced defect [5992-25]

Author(s):
Jang, I. -Y.
Park, Y. -J.
Kwon, H. -J.
Moon, S. -Y.
Choi, S. -W.
Han, W. S. ( Samsung Electronics Co., Ltd (South Korea) )
1 more
Publication title:
25th Annual BACUS Symposium on Photomask Technology
Title of ser.:
Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:
5992
Pub. date:
2005
Pt.:
1
Page(from):
59920O
Pub. info.:
Bellingham, Wash.: SPIE - The International Society of Optical Engineering
ISSN:
0277786X
ISBN:
9780819460141 [0819460141]
Language:
English
Call no.:
P63600/5992
Type:
Conference Proceedings

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