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Defect and Composition Analysis of as-deposited and Nitrided (100)Si/SiO2/Hf1-xSiO2 Stacks byElectron Paramagnectic Resonance and Ion Beam Analysis

Author(s):
Publication title:
Defects in high-κ gate dielectric stacks : nano-electronic semiconductor devices
Title of ser.:
NATO science series. Series 2, Mathematics, physics and chemistry
Ser. no.:
220
Pub. date:
2006
Page(from):
249
Page(to):
263
Pages:
15
Pub. info.:
Dordrecht: Springer
ISBN:
9781402043659 [1402043651]
Language:
English
Call no.:
N17050/220
Type:
Conference Proceedings

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