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Probing Point Defects and Traps in Stacks of Ultrathin Hafnium Oxides on (100) Si by Electron Spin Resonance; Interfaces and N Incorporation

Author(s):
Publication title:
Defects in high-κ gate dielectric stacks : nano-electronic semiconductor devices
Title of ser.:
NATO science series. Series 2, Mathematics, physics and chemistry
Ser. no.:
220
Pub. Year:
2006
Page(from):
215
Page(to):
227
Pages:
13
Pub. info.:
Dordrecht: Springer
ISBN:
9781402043659 [1402043651]
Language:
English
Call no.:
N17050/220
Type:
Conference Proceedings

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