Blank Cover Image

Molecular Beam Epitaxy of Cubic Group III-Nitrides on Free-Standing 3C-SiC Substrates

Author(s):
As, D.J.
Potthast, S.
Schormann, J.
Li, S.F.
Lischka, K.
Nagasawa, H.
Abe, M.
2 more
Publication title:
Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005
Title of ser.:
Materials science forum
Ser. no.:
527-529
Pub. Year:
2006
Pt.:
2
Page(from):
1489
Page(to):
1492
Pages:
4
Pub. info.:
Stafa-Zuerich: Trans Tech Publications
ISSN:
02555476
ISBN:
9780878494255 [0878494251]
Language:
English
Call no.:
M23650
Type:
Conference Proceedings

Similar Items:

1 Conference Proceedings Optical Properties of Carbon Doped Cubic GaN Epilayers Grown on GaAs (001) Substrate by Molecular Beam Epitaxy

As, D.J., Kohler, U., Lischka, K.

Materials Research Society
7 Conference Proceedings Properties of Free-Standing 3C-SiC Monocrystals Grown on Undulant-Si(001) Substrate

Nagasawa, H., Yagi, K., Kawahara, T., Hatta, N.

Trans Tech Publications
2 Conference Proceedings Cathodoluminescence of MBE-Grown Cubic AlGaN/GaN Multi-Quantum Wells on GaAs (001) Substrates

As, D.J., Potthast, S., Kohler, U., Khartchenko, A., Lischka, K.

Materials Research Society
8 Conference Proceedings Crystallinity of 3C-SiC Films Grown on Si Substrates

Yagi,K., Nagasawa,H.

Trans Tech Publications
3 Conference Proceedings Mechanism of Current Leakage in Ni Schottky Diodes on Cubic GaN and AlxGa1-xN Epilayers

As, Donat J., Potthast, Stefan, Fernandez, Jara, Lischka, Klaus, Nagasawa, Hiroyuki, Abe, Masayuki

Materials Research Society
9 Conference Proceedings Laser molecular beam epitaxy of BaTiO3 thin films

Cui,D. -F., Wang,H. -S., Ma,K., Chen,Z.-H., Zhou,Y., Lu,H.-B., Li,L., Yang,G.-Z.

SPIE-The International Society for Optical Engineering
4 Conference Proceedings Epitaxial growth and properties of cubic group-III nitride layers

Schikora,D., Schottger,B., As,D.J., Lischka,K.

SPIE-The International Society for Optical Engineering
10 Conference Proceedings Rotated Epitaxy of 3C-SiC(111) on Si(110) Substrate Using Monomethylsilane-Based Gas-Source Molecular-Beam Epitaxy

S. Sambonsuge, E. Saito, M.H. Jung, H. Fukidome, S. Filimonov

Trans Tech Publications
5 Conference Proceedings An Accurate Method to Determine the Growth Conditions during Molecular Beam Epitaxy of Cubic GaN

Schottker,B., Kuhler,J., As,D.J., Schikora,D., Lischka,K.

Trans Tech Publications
11 Conference Proceedings GroupⅢ-nitride alloys as photovoltaic materials

Ager III, W., Wu, J., Yu, K. M., Jones, R. E., Li, S. X., Walukiewicz, W., Haller, E. E., Lu, H., Schaff, W.J.

SPIE - The International Society of Optical Engineering
6 Conference Proceedings Electrical and Optical Properties of Carbon Doped Cubic GaN Epilayers Grown Under Extreme Ga Excess

As, D.J., Pacheco-Salazar, D.G., Potthast, S., Lischka, K.

Materials Research Society
12 Conference Proceedings Direct Growth of High Quality GaN by Plasma Assisted Molecular Beam Epitaxy on 4H-SiC Substrates

Fossard, F., Brault, J., Gogneau, N., Monroy, E., Enjalbert, F., Dang, L.S., Bellet-Amalric, E., Monnoye, S., Mank, H., …

Trans Tech Publications
1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12