Device Options and Design Considerations for High-Voltage (10-20 kV) SiC Power Switching Devices
- Author(s):
- Publication title:
- Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005
- Title of ser.:
- Materials science forum
- Ser. no.:
- 527-529
- Pub. Year:
- 2006
- Pt.:
- 2
- Page(from):
- 1449
- Page(to):
- 1452
- Pages:
- 4
- Pub. info.:
- Stafa-Zuerich: Trans Tech Publications
- ISSN:
- 02555476
- ISBN:
- 9780878494255 [0878494251]
- Language:
- English
- Call no.:
- M23650
- Type:
- Conference Proceedings
Similar Items:
Trans Tech Publications |
Trans Tech Publications |
2
Conference Proceedings
On-State and Switching Performance of High-Voltage 15 -- 20 kV 4H-SiC DMOSFETs and IGBTs
Trans Tech Publications |
8
Conference Proceedings
High-power solid-state lasers for high-energy-density physics applications at CAEP [6344-02]
SPIE - The International Society of Optical Engineering |
Trans Tech Publications |
9
Conference Proceedings
SiC Junction Control, an Alternative to MOS Control High Voltage Switching Devices
Trans Tech Publications |
4
Conference Proceedings
Comparison of 10 kV 4H-SiC Power MOSFETs and IGBTs for High Frequency Power Conversion
Trans Tech Publications |
Trans Tech Publications |
Trans Tech Publications |
Trans Tech Publications |
6
Conference Proceedings
Vacuum-seated high temperature high bandwidth fiber optic pressure and acoustic sensors [5998-10]
SPIE - The International Society of Optical Engineering |
SPIE-The International Society for Optical Engineering |