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High Temperature Characterization of 4H-SiC Bipolar Junction Transistors

Author(s):
Krishnaswami, S.
Agarwal, A.K.
Richmond, J.
Capell, C.
Ryu, S.H.
Palmour, J.W.
Geil, B.R.
Katsis, D.
Scozzie, C.J.
4 more
Publication title:
Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005
Title of ser.:
Materials science forum
Ser. no.:
527-529
Pub. date:
2006
Pt.:
2
Page(from):
1437
Page(to):
1440
Pages:
4
Pub. info.:
Stafa-Zuerich: Trans Tech Publications
ISSN:
02555476
ISBN:
9780878494255 [0878494251]
Language:
English
Call no.:
M23650
Type:
Conference Proceedings

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